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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5645

Ordering number : ENN6588 2SC5645 NPN Epitaxial Planar Silicon Transistor 2SC5645 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions • Low noise : NF=1.5dB typ (f=2GHz). unit : mm • High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). [2SC5645] • Low-voltage operating . • High gain :?S21e?2=9.5dB typ (f=2GHz). 0.75 0.3 0.6 3 0 to 0.1 1 2 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : SMCP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 °C Storage Te

Keywords

 2sc5645 Datasheet, Design, MOSFET, Power

 2sc5645 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5645 Database, Innovation, IC, Electricity

 

 
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