View 2sc5646 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions • Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm • High cut-off frequency : fT=10GHz typ (VCE=1V). 2159 : fT=12.5GHz typ (VCE=3V). [2SC5646] • Low operating voltage. • High gain :?S21e?2=9.5dB typ (f=2GHz). 1.4 • Ultraminiature and thin flat leadless package 0.1 0.25 (1.4mm 0.8mm 0.6mm). 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : SSFP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 30 mA Collector Dissipation PC
Keywords
2sc5646 Datasheet, Design, MOSFET, Power
2sc5646 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5646 Database, Innovation, IC, Electricity
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