All Transistors. Datasheet

 

View 2sc5695 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5695

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV • High voltage: VCBO = 1500 V • Low saturation voltage: V = 3 V (max) CE (sat) • High speed: t (2) = 0.1 µs (typ.) f Maximum Ratings (Tc = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 22 Collector current A Pulse ICP 44 Base current IB 11 A Collector power dissipation PC 200 W Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55~150 °C JEITA ? TOSHIBA 2-21F2A Weight: 9.75 g (typ.) Electrical Characteristics (Tc = = 25°C) = = Characteristics Symbol Test Condition Min

Keywords

 2sc5695 Datasheet, Design, MOSFET, Power

 2sc5695 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5695 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.