View 2sc5699 datasheet:

Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. unit : mm • High breakdown voltage(VCBO=1500V). 2174A • High reliability(Adoption of HVP process). [2SC5699] • Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A 3.0 W Collector Dissipation PC Tc=25°C65 W Junction Temperature Tj 150 °