View 2sd1302 e datasheet:

Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 5.0± 0.2 4.0± 0.2 For DC-DC converter Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 25 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V 1 2 3 1:Emitter Peak collector current ICP 1 A 2:Collector 3:Base Collector current IC 0.5 A 2.54± 0.15 JEDEC:TO–92 Collector power dissipation PC 600 mW EIAJ:SC–43A Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Paramet