View 2sd1314 datasheet:

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications • High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C • Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B • High speed: t = 3 µs (max) (I = 15 A) f C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 450 V Emitter-base voltage VEBO 6 V DC IC 15 Collector current A Pulse ICP 30 Base current IB 1.0 A JEDEC ? Collector power dissipation JEITA ? PC 150 W (Tc = 25°C) TOSHIBA 2-21F1A Junction temperature Tj 150 °C Weight: 9.75 g (typ.) Storage temperature range Tstg -55 to