View 2sd1328 e datasheet:

Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting For DC-DC converter +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features Low collector to emitter saturation voltage VCE(sat). 1 Low ON resistance Ron. 3 High foward current transfer ratio hFE. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V 0.1 to 0.3 0.4± 0.2 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A 1:Base JEDEC:TO–236 Collector current IC 0.5 A 2:Emitter EIAJ:SC–59 Collector power dissipation PC 200 mW 3:Collector Mini Type Package Junction temperature Tj 150 ?C Marking symbol : 1D Storage temperature Tstg –55 ~ +150 ?C El