View 2sd1330 e datasheet:

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification Unit: mm For muting 6.9± 0.1 2.5± 0.1 For DC-DC converter 1.5 1.5 R0.9 1.0 R0.9 Features Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 0.85 M type package allowing easy automatic and manual insertion as 0.55± 0.1 0.45± 0.05 well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V 2.5 2.5 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V 1:Base Peak collector current ICP 1 A 2:Collector EIAJ:SC–71 Collector current IC 0.5 A 3:Emitter M Type Mold Package Collector power dissi