View 2sd1350 e datasheet:

Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching Unit: mm Features High collector to base voltage VCBO. 6.9± 0.1 2.5± 0.1 1.5 High collector to emitter voltage VCEO. 1.5 R0.9 1.0 R0.9 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25?C) 0.85 Parameter Symbol Ratings Unit 0.55± 0.1 0.45± 0.05 Collector to 2SD1350 400 VCBO V base voltage 2SD1350A 600 3 2 1 Collector to 2SD1350 400 VCEO V emitter voltage 2SD1350A 500 2.5 2.5 Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A 1:Base Collector current I