View 2sd1385 e datasheet:

Transistor 2SD1385 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.85 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.55± 0.1 0.45± 0.05 3 2 1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 2.5 2.5 Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V 1:Base Emitter to base voltage VEBO 5 V 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package Peak collector current ICP 200 mA Collector current