View 2sd2318 datasheet:

2SD2318 Transistors High-current gain Power Transistor (60V, 3A) 2SD2318 Features External dimensions (Units : mm) 1) High DC current gain. 2) Low saturation voltage. 5.5 1.5 (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. 0.9 C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM : CPT3 9.5 Absolute maximum ratings (Ta=25°C) (3) Emitter(Source) EIAJ : SC-63 Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V 3 A Collector current IC 4.5 A(Pulse) * 1 W Collector power dissipation PC 15 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse Pw=100ms * Packaging specifications and hFE Type 2SD2318 Package