View 2sd2321 e datasheet:

Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V 2.54± 0.15 Emitter to base voltage VEBO 7 V Collector current IC 5 A 1:Emitter 2:Collector EIAJ:SC–72 Peak collector current ICP 8 A 3:Base New S Type Package Collector power dissipation PC 400 mW Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Un