View 2sd2345 e datasheet:

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2± 0.1 Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA 1:Base 2:Emitter EIAJ:SC–75 Collector current IC 50 mA 3:Collector SS–Mini Type Package Collector power dissipation PC 125 mW Marking symbol : 1Z Junction temperature Tj 125 ?C Storage temperature Tstg –55 ~ +125 ?C Electrical Characteristics (Ta=25?C) Parameter Sy