View 2sd2386 datasheet:

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 0.1 A Collector power dissipation PC 70 W (Tc = 25°C) Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? Equivalent Circuit TOSHIBA 2-16C1A Weight: 4.7 g (typ.) COLLECTOR BASE ? 100 ? EMITTER 1 2003-02-04 2SD2386 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min