View 2sd2394 datasheet:

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 ? 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emitter Source ROHM : TO-220FN Absolute maximum ratings (Ta = 25�C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V IC 3 A(DC) Collector current ICP 6 A(Pulse) ? 2 W Collector power dissipation PC 25 W(Tc=25�C) Junction temperature Tj 150 �C Storage temperature Tstg - 55 ? +150 �C ? Single pulse, Pw=100ms Pac