Ordering number:397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions · Especially suited for use in output stage of 10W AF unit:mm Power amplifier. 2010C · Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC : TO-220AB 1 : Base ( ) : 2SB514 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)50 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)2 A Collector Current (Pulse) ICP (–)5 A Collector Dissipation PC 1.75 W Tc=25?C 20 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –