View 2sd613 datasheet:

Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions · High breakdown voltage, VCEO85V, high current 6A. unit:mm · AF25 to 35W output. 2010C [2SB633/2SD613] JEDEC : TO-220AB 1 : Base ( ) : 2SB633 EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)100 V Collector-to-Emitter Voltage VCEO (–)85 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)6 A Collector Current (Pulse) ICP (–)10 A Collector Dissipation PC Tc=25?C 40 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parame