View 2sd661 e datasheet:

Transistor 2SD661, 2SD661A Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD661 35 VCBO V base voltage 2SD661A 55 2.5 2.5 Collector to 2SD661 35 VCEO V emitter voltage 2SD661A 55 1:Base Emitter to base voltage VEBO 7 V 2:Collector EIAJ:SC–71 Peak collector current ICP 200 mA 3:Emitter M Type Mold Package Collector current IC 100 mA Collector power dissipation PC 400 mW Junction te