View 2sd662 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati
Keywords
2sd662 e Datasheet, Design, MOSFET, Power
2sd662 e RoHS, Compliant, Service, Triacs, Semiconductor
2sd662 e Database, Innovation, IC, Electricity