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2sd662_e

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Rati

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 2sd662 e Datasheet, Design, MOSFET, Power

 2sd662 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd662 e Database, Innovation, IC, Electricity

 

 
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