View 2sd662 e datasheet:

Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to 2SD662 250 VCBO V base voltage 2SD662B 400 2.5 2.5 Collector to 2SD662 200 VCEO V emitter voltage 2SD662B 400 1:Base Emitter to base voltage VEBO 5 V 2:Collector EIAJ:SC–71 Peak collector current ICP 100 mA 3:Emitter M Type Mold Package Collector current IC 70 mA Collector power dissipation PC 600