View 2sd880 utc datasheet:

UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300(Max.)(VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) *High Power Dissipation: PC=30W (Ta=25°C *Complementary to 2SB834 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Maximum Voltages and currents Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Maximum Power Dissipation Total Power Dissipation PD 30 W Maximum Temperature Junction Temperature Range TOPR 150 °C Storage Temperature Rang