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2sd882s_utc

UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector dissipation( Tc=25°C) Pc 10 W Collector dissipation( Ta=25°C) Pc 1 W Collector current(DC) Ic 3 A Collector current(PULSE) Ic 7 A Base current IB 0.6 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAME

Keywords

 2sd882s utc Datasheet, Design, MOSFET, Power

 2sd882s utc RoHS, Compliant, Service, Triacs, Semiconductor

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