View 2sk1061 datasheet:

2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications • Excellent switching times: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs • Low on resistance: R = 0.6 ? (typ.) DS (ON) • Enhancement-mode • Complementary to 2SJ167 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V DC ID 200 Drain current mA Pulse IDP 800 JEDEC ? Drain power dissipation (Ta = 25°C) PD 300 mW JEITA ? Channel temperature Tch 150 °C TOSHIBA 2-4E1E Storage temperature range Tstg -55~150 °C Weight: 0.13 g (typ.) 1 2003-03-25 2SK1061 Electrical Cha