View 2sk1062 datasheet:

2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit: mm Analog Switching Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Y | = 100 mS (min) fs @I = 50 mA D • Low on resistance: R = 0.6 ? (typ.) @ I = 50 mA DS (ON) D • Enhancement-mode • Complementary to 2SJ168 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ±20 V DC ID 200 JEDEC ? Drain current mA Pulse IDP 800 JEITA SC-59 Drain power dissipation (Ta = 25°C) PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 °C Weight: 0.012 g (typ.) Storage temperature range Tstg -55~150 °C Marki