View 2sk1065 datasheet:

Ordering number:ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions · Ultrasmall package facilitates miniaturization in end unit:mm products. 2057A · Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Drain 3 : Source SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage VGDO –20 V Gate Current IG 10 mA Drain Current ID 20 mA Allowable Power Dissipation PD 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Vo