View 2sk1066 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · High-frequency general-purpose amplifier. unit:mm · AM tuner RF amplifier. 2058 · Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 · Large ? yfs? . 0 to 0.1 · Small Crss. · Ultralow noise figure. · Ultrasmall-sized package permitting 2SK1066- 1 2 0.3 0.6 0.65 0.65 applied sets to be made smaller and slimmer. 0.9 2.0 1 : Source 2 : Drain 3 : Gate SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 20 mA Allowable Power Dissipation PD 150 mW
Keywords
2sk1066 Datasheet, Design, MOSFET, Power
2sk1066 RoHS, Compliant, Service, Triacs, Semiconductor
2sk1066 Database, Innovation, IC, Electricity
