View 2sk1068 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions · Impedance conversion. unit:mm · Infrared sensor. 2058 [2SK1068] Features 0.3 · Small IGSS. 0.15 3 · Small Crss. 0 to 0.1 · Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Source 2 : Drain 3 : Gate SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 40 V Gate-to-Drain Voltage VGDS –40 V Gate Current IG 10 mA Drain Current ID 1 mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics a
Keywords
2sk1068 Datasheet, Design, MOSFET, Power
2sk1068 RoHS, Compliant, Service, Triacs, Semiconductor
2sk1068 Database, Innovation, IC, Electricity