View 2sk170 datasheet:

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.C. head amplifiers. • High |Y |: |Y | = 22 mS (typ.) (V = 10 V, V = 0, I = 3 mA) fs fs DS GS DSS • High breakdown voltage: V = -40 V GDS • Low noise: E = 0.95 nV/Hz1/2 (typ.) n (V = 10 V, I = 1 mA, f = 1 kHz) DS D • High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -40 V Gate current IG 10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical Characterist