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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk1724

Ordering number:EN3819 N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2062A · Low-voltage drive. [2SK1724] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±15 V Drain Current (DC) ID 1 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 4 A Tc=25° C 3.5 W Allowable Power Dissipation PD Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings

Keywords

 2sk1724 Datasheet, Design, MOSFET, Power

 2sk1724 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk1724 Database, Innovation, IC, Electricity

 

 
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