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2sk1730

Ordering number:EN3825 N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2087A · Low-voltage drive. [2SK1730] 2.5 · Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±15 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) IDP 7.2 A Allowable Power Dissipation PD 1 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drai

Keywords

 2sk1730 Datasheet, Design, MOSFET, Power

 2sk1730 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk1730 Database, Innovation, IC, Electricity

 

 
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