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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk1740

Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Features Package Dimensions � Adoption of FBET process. unit:mm � Large?yfs?. 2050A � Small Ciss. [2SK1740] � Small-sized package permitting 2SK1740-applied 0.4 0.16 sets to be made small and slim. 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 40 V Gate-to-Drain Voltage VGDS �40 V Gate Current IG 10 mA Drain Current ID 75 mA Allowable Power Dissipation PD 250 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg �55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parame

Keywords

 2sk1740 Datasheet, Design, MOSFET, Power

 2sk1740 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk1740 Database, Innovation, IC, Electricity

 

 
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