View 2sk2009 datasheet:

2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit: mm Analog Switch Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.06 µs (typ.) on t = 0.12 µs (typ.) off • Low drain-source ON resistance: R = 1.2 ? (typ.) DS (ON) • Small package. • Enhancement-mode Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25°C) = = JEITA SC-59 TOSHIBA 2-3F1F Characteristics Symbol Rating Unit Weight: 0.012 g (typ.) Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC drain current ID 200 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Thi