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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2011

Ordering number:EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SK2011] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 250 V Gate-to-Source Voltage VGSS �30 V Drain Current (DC) ID 12 A Drain Current (Pulse) IDP PW? 10� s, duty cycle? 1% 48 A 2.0 W Allowable Power Dissipation PD 30 W Tc=25?C Channel Temperature Tch 150 ?C Storage Temperature Tstg �55 to +150 ?C Electrical Ch

Keywords

 2sk2011 Datasheet, Design, MOSFET, Power

 2sk2011 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2011 Database, Innovation, IC, Electricity

 

 
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