View 2sk2012 datasheet:

Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2063A · Low-voltage drive. [2SK2012] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 250 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 18 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% 72 A 2.0 W Allowable Power Dissipation PD 40 W Tc=25?C Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical C