View 2sk2013 datasheet:

2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SJ313 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS ±20 V Drain current (Note 1) ID 1 A Drain power dissipation (Tc = 25°C) PD 25 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Marking JEDEC ? JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VDS = 0, VGS = ±20 V — — ±100 nA Drain-source bre