View 2sk2014 datasheet:

Power F-MOS FETs 2SK758 2SK2014 Silicon N-Channel Power F-MOS Unit : mm Features 6.5± 0.1 Low ON-resistance RDS(on) : RDS(on)1= 0.7? (typ) 5.3± 0.1 4.35± 0.1 No secondary breakdown 3.0± 0.1 Low-voltage drive possible(VGS= 4V) Taping supply possible Applications DC-DC converter 1.0± 0.1 Non-contact relay 0.85± 0.1 0.75± 0.1 0.5± 0.1 Solenoid drive 4.6± 0.1 0.05 to 0.15 Motor drive 1 : Gate 1 2 3 2 : Drain Marking 3 : Source Absolute Maximum Ratings (Tc = 25?C) EIAJ : SC-63 U Type Package Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 100 V Gate-Source voltage VGSS ±20 V at 4V drive ID ±1 A Drain current Pulse IDP ±2 A TC= 25?C 10 Allowable power PD W dissipation Ta= 25?C 0.75 Channel temperature Tch 150 ?C Storage temperature Ts