View 2sk2016 datasheet:

Power F-MOS FETs 2SK2016 2SK2016 Silicon N-Channel Power F-MOS Unit : mm Features 6.5± 0.1 Low ON-resistance RDS(on) : RDS(on)1= 0.315?(typ) 5.3± 0.1 4.35± 0.1 High-speed switching : tf= 38ns(typ) 3.0± 0.1 No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0± 0.1 DC-DC converter 0.85± 0.1 0.75± 0.1 0.5± 0.1 Non-contact relay 4.6± 0.1 0.05 to 0.15 Solenoid drive Motor drive 1 : Gate 1 2 3 2 : Drain Marking 3 : Source Absolute Maximum Ratings (Tc = 25?C) EIAJ : SC-63 U Type Package Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 100 V Gate-Source voltage VGSS ±20 V at 4V drive ±3 ID A Drain current DC ±5 Pulse IDP ±10 A TC= 25?C 10 Allowable power PD W dissipation Ta=25?C 0.75 Channel temp