View 2sk2032 datasheet:

Power F-MOS FETs 2SK2032 2SK2032 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed : EAS > 200mJ 15.0± 0.3 5.0± 0.2 VGSS=±30V guaranteed 11.0± 0.2 3.2 High-speed switching : tf= 90ns o3.2± 0.1 No secondary breakdown Applications 2.0± 0.2 2.0± 0.1 Non-contact relay 1.1± 0.1 0.6± 0.2 Solenoid drive 5.45± 0.3 Motor drive 10.9± 0.5 Control equipment 1 2 3 Switching mode regulator 1 : Gate 2 : Drain Absolute Maximum Ratings (Tc = 25?C) 3 : Source TOP-3 Full Pack Package (a) Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 450 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Drain current Pulse IDP ±26 A Avalanche energy capability EAS *1 200 mJ TC= 25?C PD *2 100 W Allowable power dissipation Ta=25?C PD *