View 2sk2035 datasheet:

2SK2035 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2035 High Speed Switching Applications Unit: mm Analog Switching Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.16 µs (typ.) on t = 0.15 µs (typ.) off • Small package • Enhancement-mode Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? JEITA ? Characteristics Symbol Rating Unit TOSHIBA 2-2H1B Drain-source voltage VDS 20 V Weight: 2.4 mg (typ.) Gate-source voltage VGSS 10 V Drain current ID 100 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: This transistor is electrostatic sensitive device. Please handle with caushon.