View 2sk2036 datasheet:

2SK2036 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2036 High Speed Switching Applications Unit: mm Analog Switching Applications • High input impedance. • Low gate threshold voltage: V = 0.5~1.5 V th • Excellent switching times: t = 0.28 µs (typ.) on t = 0.34 µs (typ.) off • Small package • Enhancement-mode Marking Equivalent Circuit JEDEC TO-236MOD JEITA SC-59 Maximum Ratings (Ta = = 25°C) = = TOSHIBA 2-3F1F Characteristics Symbol Rating Unit Weight: 0.012 g (typ.) Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V Drain current ID 100 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: This transistor is electrostatic sensitive device. Please handle wi