View 2sk2047 datasheet:

Power F-MOS FETs 2SK2047 2SK2047 Silicon N-Channel Power F-MOS Unit : mm Features 7.0± 0.3 3.5± 0.2 Avalanche energy capability guaranteed : EAS > 3.6mJ 3.0± 0.2 VGSS=±30V guaranteed High-speed switching : tf= 30ns No secondary breakdown 1.1± 0.1 0.85± 0.1 Applications 0.75± 0.1 0.4± 0.1 Non-contact relay Solenoid drive 2.3± 0.2 Motor drive 4.6± 0.4 Control equipment 1 2 3 Switching mode regulator 1 : Gate 2 : Drain Absolute Maximum Ratings (Tc = 25?C) 3 : Source I Type Package Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 550 V Gate-Source voltage VGSS ±30 V DC ID ±1.2 A Drain current Pulse IDP ±3.6 A Avalanche energy capability EAS * 3.6 mJ TC= 25?C 15 Allowable power PD W dissipation Ta= 25?C 1.3 Channel temperature Tch 150 ?C