View 2sk209 datasheet:

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm • High |Yfs|: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS • High breakdown voltage: V = -50 V GDS • Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k? DS D G • High input impedance: I = -1 nA (max) at V = -30 V GSS GS • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -50 V Gate current IG 10 mA Drain power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-236 Marking JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Character