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View 2sk2645 01mr datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sk2645_01mr

N-channel MOS-FET 2SK2645-01MR FAP-IIS Series 600V 1,2? 9A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings ( C=25°C), unless otherwise specified T Item Symbol Rating Unit Drain-Source-Voltage V 600 V DS Continous Drain Current I 9 A D Pulsed Drain Current ID(puls) 32 A Gate-Source-Voltage V ±30 V GS Repetitive or Non-Repetitive (Tch ? 150°C) I 9 A AR Avalanche Energy E 71,9 mJ AS Max. Power Dissipation P 50 W D Operating and Storage Temper

Keywords

 2sk2645 01mr Datasheet, Design, MOSFET, Power

 2sk2645 01mr RoHS, Compliant, Service, Triacs, Semiconductor

 2sk2645 01mr Database, Innovation, IC, Electricity

 

 
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