View 2sk436 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AM tuner RF amplifiers and low-noise amplifiers. unit:mm 2050A Features [2SK436] · Large? yfs?. 0.4 0.16 · Ultralow noise figure. 3 · Small Crss. 0 to 0.1 · Ultrasmall-sized package permitting 2SK436-applied sets to be made small and slim. 1 0.95 2 0.95 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 15 V Gate-to-Drain Voltage VGDS –15 V Gate Current IG 10 mA Drain Current ID 20 mA Allowable Power Dissipation PD 150 mW ?C Junction Temperature Tj 125 ?C Storage Tempe
Keywords
2sk436 Datasheet, Design, MOSFET, Power
2sk436 RoHS, Compliant, Service, Triacs, Semiconductor
2sk436 Database, Innovation, IC, Electricity