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View 74ahc ahct1g00 2 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

74ahc_ahct1g00_2

INTEGRATED CIRCUITS DATA SHEET 74AHC1G00; 74AHCT1G00 2-input NAND gate 1999 Jan 27 Product specification Supersedes data of 1998 Nov 25 File under Integrated Circuits, IC06 Philips Semiconductors Product specification 2-input NAND gate 74AHC1G00; 74AHCT1G00 FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb =25°C; tr =tf ? 3.0 ns. • Symmetrical output impedance • High noise immunity TYPICAL SYMBOL PARAMETER CONDITIONS UNIT • ESD protection: AHC1G AHCT1G HBM EIA/JESD22-A114-A tPHL/tPLH propagation delay CL =15pF 3.5 3.6 ns exceeds 2000 V inA, inB to outY VCC =5V MM EIA/JESD22-A115-A CI input capacitance 1.5 1.5 pF exceeds 200 V CPD power dissipation notes 1 and 2; 17 18 pF • Low power dissipation capacitance CL =50pF; • Balanced propagation delays f =1MHz • Very sma

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