View bas16 datasheet:

Silicon Switching Diode BAS 16 For high-speed switching Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BAS 16 A6s Q62702-F739 SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =54?C Ptot 370 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 330 K/W Junction - soldering point Rth JS ? 260 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 07.94 Semiconductor Group 1 BAS 16 Electrical Characteristics at TA = 25 ?C, unless otherwise specified. Para