View bas1602w datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1 = A 2 = C SCD-80 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 75 V VR Peak reverse voltage 85 VRM Forward current 250 mA IF 2.5 A Surge forward current, t = 1 µ s IFS 100 mW Total power dissipation, TS = 119 °C Ptot Junction temperature 150 °C Tj Storage temperature - 65 ...+150 Tstg Semiconductor Group 1 Jul-24-1998 Semiconductor Group 1 1998-11-01 BAS 16-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage 75 - - V V(BR) I(BR) = 100 µA Forward volta
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bas1602w Datasheet, Design, MOSFET, Power
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