View bas1603w datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1 = A 2 = C SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µ s IFS 4.5 A Total power dissipation, TS = 111 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ...+150 Thermal Resistance 1) Junction - ambient RthJA ? 235 K/W Junction - soldering point RthJS ? 155 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Mar-13-1998 Semiconductor Group 1 1998-11-01 BAS 16-03W Electrical Characteristics at TA = 25°C, unless oth
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