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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BAS16LT1/D Switching Diode BAS16LT1 3 1 Motorola Preferred Device CATHODE ANODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc 3 Peak Forward Current IF 200 mAdc 1 Peak Forward Surge Current IFM(surge) 500 mAdc 2 THERMAL CHARACTERISTICS CASE 318–08, STYLE 8 Characteristic Symbol Max Unit SOT–23 (TO–236AB) Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BAS16LT1
Keywords
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