View bas16s datasheet:

BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal (galvanic) isolated Diodes 6 in one package Tape loading orientation 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BAS 16S A6s Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µ s IFS 4.5 A Total power dissipation, TS = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 65 ...+150 Thermal Resistance 1) Junction - ambient RthJA ? 530 K/W Junction - soldering point RthJS ? 260 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Apr