View bas16w datasheet:

BAS 16W Silicon Switching Diode • For high speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16W A6s Q62702-A1050 1 = A 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 Total Power dissipation Ptot mW TS ? 119 °C 250 Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 260 K/W Junction - soldering point RthJS ? 125 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAS 16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC ch